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 CQDD-12M CQDD-12N 12 AMP TRIAC 600 THRU 800 VOLTS
Central
TM
Semiconductor Corp.
DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-12M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER
D2PAK CASE
MAXIMUM RATINGS: (TC=25C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=90C) Peak One Cycle Surge (t=8.3ms) I2t Value for Fusing (t=8.3ms) Peak Gate Power (tp=10s) Average Gate Power Dissipation Peak Gate Current (tp=10s) Peak Gate Voltage (tp=10s) Critical Rate of Rise of On-State Current Repetitive (f=60Hz) Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance di/dt Tstg TJ JA JC 10 -40 to +150 -40 to +125 60 2.7 A/s C C C/W C/W VDRM IT(RMS) ITSM I2t PGM PG (AV) IGM VGM CQDD -12M 600 12 80 27 40 1.0 4.0 16 CQDD -12N 800 UNITS V A A A2s W W A V
ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT IH VGT VGT VTM dv/dt Rated VDRM Rated VDRM, TC=125C VD=12V, RL=10, QUAD I, II, III VD=12V, RL=10, QUAD IV IT=100mA VD=12V, RL=10, QUAD I, II, III VD=12V, RL=10, QUAD IV ITM=17A, tp=380s VD=2 /3 VDRM, RGK=, TC=125C 10
TYP
MAX 10 500
UNITS A A mA mA mA V V V V/s
9.9 24.3 14.1 1.10 2.10 1.33
20 50 25 1.50 2.50 1.50
R1 (24-September 2004)
Central
TM
Semiconductor Corp.
CQDD-12M CQDD-12N 12 AMP TRIAC 600 THRU 800 VOLTS
D2PAK CASE - MECHANICAL OUTLINE
LEAD CODE: 1) MT1 2) MT2 3) GATE 4) MT2 MARKING CODE: FULL PART NUMBER
DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX A 0.163 0.189 4.14 4.80 B 0.045 0.055 1.14 1.40 C 0.000 0.010 0.00 0.25 D 0.012 0.028 0.30 0.70 E 0.386 0.409 9.80 10.40 F 0.378 0.417 9.60 10.60 G 0.335 0.358 8.50 9.10 H 0.197 0.236 5.00 6.00 J 0.093 0.108 2.35 2.75 K 0.030 0.035 0.75 0.90 D2PAK (REV: R2)
R1 (24-September 2004)


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